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| Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE18008 Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1000 450 9 8 16 4 8 125 150 -65~150 ae ae UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient VALUE 1.0 62.5 ae UNIT ae /W /W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage CONDITIONS IC=0.1A L=25mH IC=2A IB=0.2A TC=125ae IC=4.5A IB=0.9A TC=125ae IC=2A IB=0.2A IC=4.5A IB=0.9A VCES=RatedVCES; VEB=0 TC=125ae VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency Collector outoput capacitance VCE=RatedVCEO; IB=0 VEB=9V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=1V IC=2A ; VCE=1V IC=10mA ; VCE=5V IC=0.5A ; VCE=10V f=1MHz ; VCB=10V 10%,Pulse Width=20|I s VCC=300V ,IC=2A IB1=0.2A; IB2=1.0A 14 6 11 10 MIN 450 SYMBOL VCEO(SUS) VCEsat-1 MJE18008 TYP. MAX UNIT V 0.6 0.65 0.7 0.8 1.10 1.25 0.1 0.5 0.1 0.1 0.1 34 V VCEsat-2 VBEsat-1 VBEsat-2 Collector-emitter saturation voltage Emitter-base saturation voltage Emitter-base saturation voltage V V V ICES Collector cut-off current mA mA mA 13 100 MHz pF Switching times resistive load,Duty CycleU ton toff ton toff Turn-on time Turn-off time Turn-on time Turn-off time 0.3 2.5 0.18 2.5 |I |I |I s s s |I s VCC=300V ,IC=4.5A IB1=0.9A; IB2=2.25A JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE MJE18008 Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) JMnic |
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